Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers

Metamorphic strain compensated InSb/InAsSb0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further i...

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Veröffentlicht in:Applied physics letters 2018-11, Vol.113 (21)
Hauptverfasser: Ermolaev, Maksim, Suchalkin, Sergey, Belenky, Gregory, Kipshidze, Gela, Laikhtman, Boris, Moon, Seongphill, Ozerov, Mykhaylo, Smirnov, Dmitry, Svensson, Stefan P., Sarney, Wendy L.
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Sprache:eng
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Zusammenfassung:Metamorphic strain compensated InSb/InAsSb0.52 superlattices (SLs) with ultrathin layers and different periods grown on GaSb substrate were designed, fabricated, and characterized. It was shown that a period increase from 3 to 6.2 nm reduced the effective bandgap energy from 70 to 0 meV. A further increase in the period leads to inversion of the valence and conduction bands. Magneto-optical experiments demonstrated that Dirac-like carrier dispersion is characteristic of almost gapless InSb/InAsSb0.52 SLs. Indication of hole transport enhancement over that found in InAsSb/InAsSb SL structures is presented.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5051767