CVD growth of two-dimensional MoS2 depending on the location of the SiO2 substrates

Transition metal dichalcogenides, like MoS2, were attracted attention due to their optoelectronic properties. But fabrications of such materials still a challenge task. In this work, chemical vapor deposition (CVD) was used to synthesize two-dimensional MoS2 from S and MoO3 powders on SiO2. Lateral size of domains were up to 80 mkm and thickness of single-layered MoS2 was 0.9 nm. The structural and optical properties of the obtained two-dimensional MoS2 are studied. We find that the formation of MoS2 domains with different size is dependent on location of the SiO2 substrates.