Characterization of tin oxide (SnO2) nanostructures prepared by thermal oxidation

Tin oxide (SnO2) nanocrystals and nanowires were successfully synthesized on Si (100) substrate by thermal oxidation method at different oxidation temperatures 450 °C, 500 °C and 550 °C. The synthesized nanostructures were characterized by FESEM, Uv-Vis and Photoluminescence spectrum. The morphology of the samples was confirmed by FESEM. Meanwhile, the optical properties were obtained from Uv-Vis and photoluminescence (PL) spectrum. Tin oxide nanowires were obtained at oxidation temperatures 500 °C with energy band gaps of 1.21 eV. PL emission spectra results showed that tin oxide nanowires at 500 °C exhibit first maximum peak at 450 nm (2.76 eV), second maximum peak at 500 nm excitation (2.48 eV) and third maximum highest peak at 650 nm excitation (1.91 eV). In this work, we investigate the right oxidation temperature to synthesize tin oxide nanowires. The structural and optical properties of the synthesized tin oxide thin film can be improve by oxidation temperature.