Forming Porous Structures on Silicon with a Ferroelectric for Capacitive Microelectronic and Microsystems Engineering Elements

The formation of heterostructures based on porous silicon with barium titanate for application in capacitive electronic and microsystem engineering elements has been experimentally investigated. The dependences of the capacitance and permittivity on the porous matrix dimensions, number of deposited...

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Veröffentlicht in:	Theoretical foundations of chemical engineering 2018-09, Vol.52 (5), p.862-867
Hauptverfasser:	Semenova, O. V., Railko, M. Yu, Patrusheva, T. N., Merkushev, F. F., Podorozhyak, S. A., Yuzova, V. A., Korets, A. Ya, Khol’kin, A. I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Barium titanates Chemistry Chemistry and Materials Science Ferroelectric materials Ferroelectricity Heterostructures Industrial Chemistry/Chemical Engineering Plates (structural members) Porous media Porous silicon Silicon Technology of Inorganic Substances and Materials
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Beschreibung
Zusammenfassung:	The formation of heterostructures based on porous silicon with barium titanate for application in capacitive electronic and microsystem engineering elements has been experimentally investigated. The dependences of the capacitance and permittivity on the porous matrix dimensions, number of deposited barium titanate layers, and material of capacitor structure plates has been analyzed.
ISSN:	0040-5795 1608-3431
DOI:	10.1134/S0040579518050238