Full-inorganic Sb^sub 2^(S,Se)^sub 3^ solar cells using carbon as both hole selection material and electrode

Sb2(S,Se)3 are considered as a promising absorber material for solar cells owing to its earth-abundant, nontoxic constituent, simple phase and long-term durability. In this work, a facile chemical bath deposition followed by post-selenization was introduced to prepare Sb2(S,Se)3 thin film, which leads to a graded band gap structure. The sulfoselenide Sb2(S,Se)3 thin films with smooth morphology were obtained through optimizing the selenization process. Meanwhile, a low cost and substitutable carbon electrode was used as hole selection material. Sequentially, the full-inorganic Sb2(S,Se)3 device with efficiency of 2.64% was also fabricated according to structure of FTO/CdS/Sb2(S,Se)3/Carbon, which is the highest value in CBD processed FTO/CdS/Sb2(S, Se)3/Carbon solar cells.