Surface atomic structure of epitaxial LaNiO3 thin films studied by in situ LEED-I(V)

We report in situ low-energy electron diffraction intensity versus voltage [LEED-I(V)] studies of the surface atomic structure of epitaxially grown (001)pc-oriented (pc=pseudocubic) thin films of the correlated 3d transition-metal oxide LaNiO3. Our analysis indicates the presence of large out-of-pla...

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Veröffentlicht in:Physical review. B 2017-03, Vol.95 (11), p.115418
Hauptverfasser: Ruf, J P, King, P D C, Nascimento, V B, Schlom, D G, Shen, K M
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Sprache:eng
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Zusammenfassung:We report in situ low-energy electron diffraction intensity versus voltage [LEED-I(V)] studies of the surface atomic structure of epitaxially grown (001)pc-oriented (pc=pseudocubic) thin films of the correlated 3d transition-metal oxide LaNiO3. Our analysis indicates the presence of large out-of-plane bucklings of the topmost LaO layers but only minor bucklings of the topmost NiO2 layers, in close agreement with earlier surface x-ray diffraction data. In view of materials design approaches that have suggested using atomic-scale polar structural distortions to produce designer electronic structures in artificial nickelate heterostructures, we propose that the broken inversion symmetry inherent to the surface of rare-earth nickelate thin films offers a similar opportunity to study the coupling between atomic structure and electronic properties in this family of materials.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.95.115418