Surface atomic structure of epitaxial LaNiO3 thin films studied by in situ LEED-I(V)
We report in situ low-energy electron diffraction intensity versus voltage [LEED-I(V)] studies of the surface atomic structure of epitaxially grown (001)pc-oriented (pc=pseudocubic) thin films of the correlated 3d transition-metal oxide LaNiO3. Our analysis indicates the presence of large out-of-pla...
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Veröffentlicht in: | Physical review. B 2017-03, Vol.95 (11), p.115418 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report in situ low-energy electron diffraction intensity versus voltage [LEED-I(V)] studies of the surface atomic structure of epitaxially grown (001)pc-oriented (pc=pseudocubic) thin films of the correlated 3d transition-metal oxide LaNiO3. Our analysis indicates the presence of large out-of-plane bucklings of the topmost LaO layers but only minor bucklings of the topmost NiO2 layers, in close agreement with earlier surface x-ray diffraction data. In view of materials design approaches that have suggested using atomic-scale polar structural distortions to produce designer electronic structures in artificial nickelate heterostructures, we propose that the broken inversion symmetry inherent to the surface of rare-earth nickelate thin films offers a similar opportunity to study the coupling between atomic structure and electronic properties in this family of materials. |
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ISSN: | 2469-9950 2469-9969 |
DOI: | 10.1103/PhysRevB.95.115418 |