Formation of a passivatingCH3NH3PbI3/PbI2 interface during moderateheating of CH3NH3PbI3 layers
Layers of CH3NH3PbI3 are investigated by modulatedsurfacephotovoltage spectroscopy (SPV) during heating in vacuum. As preparedCH3NH3PbI3 layers behave as a p-type dopedsemiconductor in depletion with a band gap of 1.5 eV. Afterheating to 140 °C the sign of the SPV signals ofCH3NH3PbI3 changed concom...
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| Veröffentlicht in: | Applied physics letters 2013-10, Vol.103 (18) |
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| container_title | Applied physics letters |
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| creator | Supasai, T Rujisamphan, N Ullrich, K Chemseddine, A Dittrich Th |
| description | Layers of CH3NH3PbI3 are investigated by modulatedsurfacephotovoltage spectroscopy (SPV) during heating in vacuum. As preparedCH3NH3PbI3 layers behave as a p-type dopedsemiconductor in depletion with a band gap of 1.5 eV. Afterheating to 140 °C the sign of the SPV signals ofCH3NH3PbI3 changed concomitant with the appearance of asecond band gap at2.36 eV ascribed to PbI2, and SPV signals related to charge separation fromdefect states were reduced after moderate heating. |
| doi_str_mv | 10.1063/1.4826116 |
| format | Article |
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Afterheating to 140 °C the sign of the SPV signals ofCH3NH3PbI3 changed concomitant with the appearance of asecond band gap at2.36 eV ascribed to PbI2, and SPV signals related to charge separation fromdefect states were reduced after moderate heating.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4826116</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Energy gap ; Heating</subject><ispartof>Applied physics letters, 2013-10, Vol.103 (18)</ispartof><rights>2013 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Supasai, T</creatorcontrib><creatorcontrib>Rujisamphan, N</creatorcontrib><creatorcontrib>Ullrich, K</creatorcontrib><creatorcontrib>Chemseddine, A</creatorcontrib><creatorcontrib>Dittrich Th</creatorcontrib><title>Formation of a passivatingCH3NH3PbI3/PbI2 interface during moderateheating of CH3NH3PbI3 layers</title><title>Applied physics letters</title><description>Layers of CH3NH3PbI3 are investigated by modulatedsurfacephotovoltage spectroscopy (SPV) during heating in vacuum. 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As preparedCH3NH3PbI3 layers behave as a p-type dopedsemiconductor in depletion with a band gap of 1.5 eV. Afterheating to 140 °C the sign of the SPV signals ofCH3NH3PbI3 changed concomitant with the appearance of asecond band gap at2.36 eV ascribed to PbI2, and SPV signals related to charge separation fromdefect states were reduced after moderate heating.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4826116</doi></addata></record> |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Applied physics Energy gap Heating |
| title | Formation of a passivatingCH3NH3PbI3/PbI2 interface during moderateheating of CH3NH3PbI3 layers |
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