Formation of a passivatingCH3NH3PbI3/PbI2 interface during moderateheating of CH3NH3PbI3 layers

Formation of a passivatingCH3NH3PbI3/PbI2 interface during moderateheating of CH3NH3PbI3 layers

Layers of CH3NH3PbI3 are investigated by modulatedsurfacephotovoltage spectroscopy (SPV) during heating in vacuum. As preparedCH3NH3PbI3 layers behave as a p-type dopedsemiconductor in depletion with a band gap of 1.5 eV. Afterheating to 140 °C the sign of the SPV signals ofCH3NH3PbI3 changed concom...

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Veröffentlicht in:Applied physics letters 2013-10, Vol.103 (18)
Hauptverfasser: Supasai, T, Rujisamphan, N, Ullrich, K, Chemseddine, A, Dittrich Th
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Energy gap
Heating
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Zusammenfassung:Layers of CH3NH3PbI3 are investigated by modulatedsurfacephotovoltage spectroscopy (SPV) during heating in vacuum. As preparedCH3NH3PbI3 layers behave as a p-type dopedsemiconductor in depletion with a band gap of 1.5 eV. Afterheating to 140 °C the sign of the SPV signals ofCH3NH3PbI3 changed concomitant with the appearance of asecond band gap at2.36 eV ascribed to PbI2, and SPV signals related to charge separation fromdefect states were reduced after moderate heating.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4826116