Thermopower of nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

Thermopower of nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

Thin films consisting of hydrogenated amorphous silicon (a-Si:H), in which germanium nanocrystals (nc-Ge) are embedded, have been synthesized using a dual-chamber co-deposition system. The thermopower and conductivity are studied as the germanium crystal fraction XGe is systematically increased. For...

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Veröffentlicht in:Journal of applied physics 2013-11, Vol.114 (19)
Hauptverfasser: Bodurtha, K., Kakalios, J.
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous silicon
Charge transport
Conduction model
Embedded systems
Germanium
Hydrogenation
Photovoltaic cells
Silicon
Thermoelectricity
Thin films
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Zusammenfassung:Thin films consisting of hydrogenated amorphous silicon (a-Si:H), in which germanium nanocrystals (nc-Ge) are embedded, have been synthesized using a dual-chamber co-deposition system. The thermopower and conductivity are studied as the germanium crystal fraction XGe is systematically increased. For XGe  25% p-type transport is observed. For films with 10% 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4832780