Strong non-volatile voltage control of magnetism in magnetic/antiferroelectric magnetoelectric heterostructures

Strong magnetoelectric coupling was demonstrated in magnetic/antiferroelectric heterostructures of FeGaB/Pb(La,Sn,Zr,Ti)O3, which exhibited a voltage induced coercive field change of 7–10 Oe and ferromagnetic resonance field shifts by ∼80 Oe. Nonvolatile voltage induced magnetization switching and f...

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Veröffentlicht in:Applied physics letters 2014-01, Vol.104 (1)
Hauptverfasser: Zhou, Z., Zhang, X. Y., Xie, T. F., Nan, T. X., Gao, Y., Yang, X., Wang, X. J., He, X. Y., Qiu, P. S., Sun, N. X., Sun, D. Z.
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Sprache:eng
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Zusammenfassung:Strong magnetoelectric coupling was demonstrated in magnetic/antiferroelectric heterostructures of FeGaB/Pb(La,Sn,Zr,Ti)O3, which exhibited a voltage induced coercive field change of 7–10 Oe and ferromagnetic resonance field shifts by ∼80 Oe. Nonvolatile voltage induced magnetization switching and ferromagnetic resonance field shift in FeGaB were realized based on the ferroelectric-antiferroelectric phase transition in Pb(La,Sn,Zr,Ti)O3. The nonvolatile strong voltage control of magnetism in magnetic/antiferroelectric heterostructures has great implications in compact and power efficient spintronics and RF/microwave components.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4861462