Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing resu...

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Veröffentlicht in:Applied physics letters 2014-01, Vol.104 (4)
Hauptverfasser: Altynnikov, A. G., Gagarin, A. G., Gaidukov, M. M., Tumarkin, A. V., Petrov, P. K., Alford, N., Kozyrev, A. B.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied physics
Capacitance
Ferroelectric materials
Ferroelectricity
Thin films
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Zusammenfassung:The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4863436