Resistive switching memories in MoS2 nanosphere assemblies

Resistive switching memories in MoS2 nanosphere assemblies

A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RE...

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Veröffentlicht in:Applied physics letters 2014-01, Vol.104 (3)
Hauptverfasser: Xu, Xiao-Yong, Yin, Zong-You, Xu, Chun-Xiang, Dai, Jun, Hu, Jing-Guo
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Assemblies
Bistability
Data storage
Electron tunneling
Graphene
Indium tin oxides
Interlayers
Memory devices
Molybdenum disulfide
Nanospheres
Potential barriers
Switching
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Beschreibung
Zusammenfassung:A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼104), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4862755