Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells
High quality surface passivation (Seff ±8 × 1012 cm−2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiNx)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx fil...
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| Veröffentlicht in: | Applied physics letters 2014-02, Vol.104 (5) |
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| container_title | Applied physics letters |
| container_volume | 104 |
| creator | Sharma, Vivek Tracy, Clarence Schroder, Dieter Herasimenka, Stanislau Dauksher, William Bowden, Stuart |
| description | High quality surface passivation (Seff ±8 × 1012 cm−2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiNx)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step. |
| doi_str_mv | 10.1063/1.4863829 |
| format | Article |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2014-02, Vol.104 (5) |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Charge distribution Organic chemistry Passivity Photovoltaic cells Plasma enhanced chemical vapor deposition Silicon dioxide Silicon nitride Silicon oxides Silicon substrates Solar cells |
| title | Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells |
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