Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

High quality surface passivation (Seff ±8 × 1012 cm−2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiNx)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx fil...

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Veröffentlicht in:Applied physics letters 2014-02, Vol.104 (5)
Hauptverfasser: Sharma, Vivek, Tracy, Clarence, Schroder, Dieter, Herasimenka, Stanislau, Dauksher, William, Bowden, Stuart
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Charge distribution
Organic chemistry
Passivity
Photovoltaic cells
Plasma enhanced chemical vapor deposition
Silicon dioxide
Silicon nitride
Silicon oxides
Silicon substrates
Solar cells
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Zusammenfassung:High quality surface passivation (Seff ±8 × 1012 cm−2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiNx)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4863829