Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy

Modulation-doped In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm...

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Veröffentlicht in:	Applied physics letters 2014-02, Vol.104 (5)
Hauptverfasser:	Wang, Juan, Xing, Jun-Liang, Xiang, Wei, Wang, Guo-Wei, Xu, Ying-Qiang, Ren, Zheng-Wei, Niu, Zhi-Chuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Atomic force microscopy Compressive properties Epitaxial growth Hole density Hole mobility Microscopy Molecular beam epitaxy Morphology Quantum wells Temperature dependence Transmission electron microscopy X-ray diffraction
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