Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy

Modulation-doped In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In0.41Ga0.59Sb channel. High room temperature hole mobility with high sheet density of 1000 cm2/Vs, 0.877 × 1012/cm2, and 965 cm2/Vs, 1.112 × 1012/cm2 were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300 K to 77 K. This study shows great potential of In0.41Ga0.59Sb/Al0.91Ga0.09Sb QW for high-hole-mobility device applications.