Enhanced piezoelectricity in YbGaN films near phase boundary

Enhanced piezoelectricity in YbGaN films near phase boundary

Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling co...

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Veröffentlicht in:Applied physics letters 2014-02, Vol.104 (8)
Hauptverfasser: Yanagitani, Takahiko, Suzuki, Masashi
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Coupling coefficients
Electromagnetic wave filters
Field effect transistors
Heterostructures
Phase boundaries
Piezoelectricity
Semiconductor devices
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Zusammenfassung:Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient kt for the YbxGa1−xN films increases with the Yb concentration from x = 0 to 0.3. Yb0.30Ga0.70N film near the phase boundary exhibited a maximum kt of 3.1%, which is approximately 2.5 times larger than that for a pure GaN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4866969