Strain-induced magnetism in MoS2 monolayer with defects

The strain-induced magnetism is observed in single-layer MoS2 with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2 μB per vacancy defect. The strain-induced band gap closure is concurrent with the occurrence of the magnetism. Possible physic...

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Veröffentlicht in:Journal of applied physics 2014-02, Vol.115 (5)
Hauptverfasser: Tao, Peng, Guo, Huaihong, Yang, Teng, Zhang, Zhidong
Format: Artikel
Sprache:eng
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Zusammenfassung:The strain-induced magnetism is observed in single-layer MoS2 with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2 μB per vacancy defect. The strain-induced band gap closure is concurrent with the occurrence of the magnetism. Possible physical mechanism of the emergence of strain-induced magnetism is illustrated. We also demonstrate the possibility to test the predicted magnetism in experiment. Our study may provide an opportunity for the design of new type of memory-switching or logic devices by using earth-rich nonmagnetic materials MoS2.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4864015