Growth of homogeneous single-layer graphene on Ni-Ge binary substrate

In contrast to the commonly used chemical vapor deposition growth that leads to multilayer graphene formation by carbon segregation from the Ni bulk, we designed a Ni-Ge binary system to directly grow graphene film on Ni-Ge binary substrate, via chemical vapor deposition with methane and hydrogen ga...

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Veröffentlicht in:	Applied physics letters 2014-02, Vol.104 (6)
Hauptverfasser:	Wang, Gang, Chen, Da, Lu, Zitong, Guo, Qinglei, Ye, Lin, Wei, Xing, Ding, Guqiao, Zhang, Miao, Di, Zengfeng, Liu, Su
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Chemical vapor deposition Graphene Multilayers Organic chemistry Substrates
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container_title	Applied physics letters
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creator	Wang, Gang Chen, Da Lu, Zitong Guo, Qinglei Ye, Lin Wei, Xing Ding, Guqiao Zhang, Miao Di, Zengfeng Liu, Su
description	In contrast to the commonly used chemical vapor deposition growth that leads to multilayer graphene formation by carbon segregation from the Ni bulk, we designed a Ni-Ge binary system to directly grow graphene film on Ni-Ge binary substrate, via chemical vapor deposition with methane and hydrogen gas as precursors. Our system fully overcomes the fundamental limitations of Ni and yields homogenous single layer graphene over large areas. The chemical vapor deposition growth of graphene on Ni-Ge binary substrate shows that self limiting monolayer graphene growth can be obtained on these substrate.
doi_str_mv	10.1063/1.4864643
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subjects	Applied physics Chemical vapor deposition Graphene Multilayers Organic chemistry Substrates
title	Growth of homogeneous single-layer graphene on Ni-Ge binary substrate
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