Photoconductivity and photo-detection response of multiferroic bismuth iron oxide

We report visible light detection with in-plane BiFeO3 (BFO) thin films grown on pre-patterned inter-digital electrodes. In-plane configured BFO film displayed photocurrents with a 40:1 photo-to-dark-current ratio and improved photo-sensing ability for >15 000 s (4 h) under small bias voltage (42...

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Veröffentlicht in:Applied physics letters 2014-03, Vol.104 (13)
Hauptverfasser: Anshul, Avneesh, Borkar, Hitesh, Singh, Paritosh, Pal, Prabir, Kushvaha, Sunil S., Kumar, Ashok
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Sprache:eng
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Zusammenfassung:We report visible light detection with in-plane BiFeO3 (BFO) thin films grown on pre-patterned inter-digital electrodes. In-plane configured BFO film displayed photocurrents with a 40:1 photo-to-dark-current ratio and improved photo-sensing ability for >15 000 s (4 h) under small bias voltage (42 V). Nearly, sixty percent of the photo-induced charge carriers decay in 1.0 s and follow a double-exponential decay model. At 373 K, the effect of light does not significantly increase the dark current, probably due to reduced mobility. Sub-bandgap weak monochromatic light (1 mw/cm2) shows one fold increase in photo-charge carriers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4870626