Electrical conduction mechanisms of Au/NiO/heavily doped p-type Si memory devices

The fabrication of memory devices based on the Au/NiO/heavily doped p-type Si (p+-Si) structures and their current-voltage characteristics were reported. The Au/NiO/p+-Si devices show hysteresis behavior. The fitting data of the temperature-dependent off-state current–voltage curves demonstrated tha...

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Veröffentlicht in:Applied physics letters 2014-04, Vol.104 (15)
Hauptverfasser: Su, Ting-Hong, Lin, Yow-Jon
Format: Artikel
Sprache:eng
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Zusammenfassung:The fabrication of memory devices based on the Au/NiO/heavily doped p-type Si (p+-Si) structures and their current-voltage characteristics were reported. The Au/NiO/p+-Si devices show hysteresis behavior. The fitting data of the temperature-dependent off-state current–voltage curves demonstrated that the carrier transport mechanism of the Au/NiO/p+-Si device was attributed to the space change limited conduction. However, the difference between the temperature-dependent on-state currents in the forward-bias and reverse-bias regions was found. The different electrical conduction mechanisms (hopping conduction and Ohmic conduction with metal-like behaviors) were discussed. This phenomenon is related to the different interfacial characteristics between Au/NiO and NiO/p+-Si.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4871693