Electrical conduction mechanisms of Au/NiO/heavily doped p-type Si memory devices
The fabrication of memory devices based on the Au/NiO/heavily doped p-type Si (p+-Si) structures and their current-voltage characteristics were reported. The Au/NiO/p+-Si devices show hysteresis behavior. The fitting data of the temperature-dependent off-state current–voltage curves demonstrated tha...
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Veröffentlicht in: | Applied physics letters 2014-04, Vol.104 (15) |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The fabrication of memory devices based on the Au/NiO/heavily doped p-type Si (p+-Si) structures and their current-voltage characteristics were reported. The Au/NiO/p+-Si devices show hysteresis behavior. The fitting data of the temperature-dependent off-state current–voltage curves demonstrated that the carrier transport mechanism of the Au/NiO/p+-Si device was attributed to the space change limited conduction. However, the difference between the temperature-dependent on-state currents in the forward-bias and reverse-bias regions was found. The different electrical conduction mechanisms (hopping conduction and Ohmic conduction with metal-like behaviors) were discussed. This phenomenon is related to the different interfacial characteristics between Au/NiO and NiO/p+-Si. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4871693 |