Influence of Ga content on the structure and anomalous Hall effect of Fe1−xGax thin films on GaSb(100)

The Fe1−xGax thin films (x = 0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc α-Fe crystal structure (A2) is observed in Fe0.6Ga0.4 film, while an impure Fe3Ga phase with DO3 structure is appeared in Fe0.5Ga0.5 film. The saturated magnetizatio...

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Veröffentlicht in:	Journal of applied physics 2014-05, Vol.115 (17)
Hauptverfasser:	Anh Tuan, Duong, Shin, Yooleemi, Phan, The-Long, Viet Cuong, Tran, Cho, Sunglae
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal structure Epitaxial growth Gallium antimonides Hall effect Hysteresis Molecular beam epitaxy Substrates Thin films
Online-Zugang:	Volltext
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