Influence of Ga content on the structure and anomalous Hall effect of Fe1−xGax thin films on GaSb(100)

Influence of Ga content on the structure and anomalous Hall effect of Fe1−xGax thin films on GaSb(100)

The Fe1−xGax thin films (x = 0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc α-Fe crystal structure (A2) is observed in Fe0.6Ga0.4 film, while an impure Fe3Ga phase with DO3 structure is appeared in Fe0.5Ga0.5 film. The saturated magnetizatio...

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Veröffentlicht in:Journal of applied physics 2014-05, Vol.115 (17)
Hauptverfasser: Anh Tuan, Duong, Shin, Yooleemi, Phan, The-Long, Viet Cuong, Tran, Cho, Sunglae
Format: Artikel
Sprache:eng
Schlagworte:
Crystal structure
Epitaxial growth
Gallium antimonides
Hall effect
Hysteresis
Molecular beam epitaxy
Substrates
Thin films
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Zusammenfassung:The Fe1−xGax thin films (x = 0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc α-Fe crystal structure (A2) is observed in Fe0.6Ga0.4 film, while an impure Fe3Ga phase with DO3 structure is appeared in Fe0.5Ga0.5 film. The saturated magnetizations at room temperature are observed to be 570 emu/cm3 and 180 emu/cm3 and the coercivities to be 170 and 364 Oe for Fe0.6Ga0.4 and Fe0.5Ga0.5, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe0.5Ga0.5 film. However, there is a weak hysteresis noticed in Fe0.4Ga0.6 thin film.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4869063