Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures

Photoelectrochemical (PEC) etching is a rapid and inexpensive means of etching GaN, InGaN, and related materials for micro-electro-mechanical systems (MEMS) applications. In this work, we show that bandgap engineering of GaN/InGaN heterostructures can be used to exert substantial control over PEC et...

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Veröffentlicht in:	Applied physics letters 2014-06, Vol.104 (24)
Hauptverfasser:	Ramesh, Prashanth, Krishnamoorthy, Sriram, Rajan, Siddharth, Washington, Gregory N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Energy gap Etching Gallium nitrides Heterostructures Mechanical systems Microelectromechanical systems
Online-Zugang:	Volltext
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