Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures
Photoelectrochemical (PEC) etching is a rapid and inexpensive means of etching GaN, InGaN, and related materials for micro-electro-mechanical systems (MEMS) applications. In this work, we show that bandgap engineering of GaN/InGaN heterostructures can be used to exert substantial control over PEC et...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2014-06, Vol.104 (24) |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Photoelectrochemical (PEC) etching is a rapid and inexpensive means of etching GaN, InGaN, and related materials for micro-electro-mechanical systems (MEMS) applications. In this work, we show that bandgap engineering of GaN/InGaN heterostructures can be used to exert substantial control over PEC etching and achieve strain-free cantilevers. A single, 200-nm thick layer InGaN was selectively etched using bandgap-selective PEC etch. We show that the use of highly doped guard layers to confine photogenerated holes uniformly across the InGaN layer enables a uniform, fast, and effective PEC etch. This approach enables complete uniform etching using PEC and could enable many optical and MEMS devices. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4883890 |