Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures

Photoelectrochemical (PEC) etching is a rapid and inexpensive means of etching GaN, InGaN, and related materials for micro-electro-mechanical systems (MEMS) applications. In this work, we show that bandgap engineering of GaN/InGaN heterostructures can be used to exert substantial control over PEC et...

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Veröffentlicht in:	Applied physics letters 2014-06, Vol.104 (24)
Hauptverfasser:	Ramesh, Prashanth, Krishnamoorthy, Sriram, Rajan, Siddharth, Washington, Gregory N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Energy gap Etching Gallium nitrides Heterostructures Mechanical systems Microelectromechanical systems
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container_title	Applied physics letters
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creator	Ramesh, Prashanth Krishnamoorthy, Sriram Rajan, Siddharth Washington, Gregory N.
description	Photoelectrochemical (PEC) etching is a rapid and inexpensive means of etching GaN, InGaN, and related materials for micro-electro-mechanical systems (MEMS) applications. In this work, we show that bandgap engineering of GaN/InGaN heterostructures can be used to exert substantial control over PEC etching and achieve strain-free cantilevers. A single, 200-nm thick layer InGaN was selectively etched using bandgap-selective PEC etch. We show that the use of highly doped guard layers to confine photogenerated holes uniformly across the InGaN layer enables a uniform, fast, and effective PEC etch. This approach enables complete uniform etching using PEC and could enable many optical and MEMS devices.
doi_str_mv	10.1063/1.4883890
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fullrecord	<record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2126591531</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2126591531</sourcerecordid><originalsourceid>FETCH-LOGICAL-c257t-4dde6c7506142cc6f8cabc03a61ee519287235463b835096e7921b217c6806803</originalsourceid><addsrcrecordid>eNotkM1qwzAQhEVpoWnaQ99A0FMPTrSS9eNjCWkaCO2l7dXI8jp2SKRUlg95-zoksOwy8LEzDCHPwGbAlJjDLDdGmILdkAkwrTMBYG7JhDEmMlVIuCcPfb8bpeRCTMjv0mPcnmhlfU3RbzuPGDu_pU2I9NiGFHCPLsXgWjx0zu4pJteegdDQlf2cr_24aYsJY-hTHFwaIvaP5K6x-x6frndKft6X34uPbPO1Wi_eNpnjUqcsr2tUTkumIOfOqcY4WzkmrAJECQU3mguZK1EZIVmhUBccKg7aKcPGEVPycvl7jOFvwD6VuzBEP1qWHLiSBUgBI_V6odyYsY_YlMfYHWw8lcDKc20llNfaxD9TGV4d</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2126591531</pqid></control><display><type>article</type><title>Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Ramesh, Prashanth ; Krishnamoorthy, Sriram ; Rajan, Siddharth ; Washington, Gregory N.</creator><creatorcontrib>Ramesh, Prashanth ; Krishnamoorthy, Sriram ; Rajan, Siddharth ; Washington, Gregory N.</creatorcontrib><description>Photoelectrochemical (PEC) etching is a rapid and inexpensive means of etching GaN, InGaN, and related materials for micro-electro-mechanical systems (MEMS) applications. In this work, we show that bandgap engineering of GaN/InGaN heterostructures can be used to exert substantial control over PEC etching and achieve strain-free cantilevers. A single, 200-nm thick layer InGaN was selectively etched using bandgap-selective PEC etch. We show that the use of highly doped guard layers to confine photogenerated holes uniformly across the InGaN layer enables a uniform, fast, and effective PEC etch. This approach enables complete uniform etching using PEC and could enable many optical and MEMS devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4883890</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Energy gap ; Etching ; Gallium nitrides ; Heterostructures ; Mechanical systems ; Microelectromechanical systems</subject><ispartof>Applied physics letters, 2014-06, Vol.104 (24)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-4dde6c7506142cc6f8cabc03a61ee519287235463b835096e7921b217c6806803</citedby><cites>FETCH-LOGICAL-c257t-4dde6c7506142cc6f8cabc03a61ee519287235463b835096e7921b217c6806803</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ramesh, Prashanth</creatorcontrib><creatorcontrib>Krishnamoorthy, Sriram</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><creatorcontrib>Washington, Gregory N.</creatorcontrib><title>Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures</title><title>Applied physics letters</title><description>Photoelectrochemical (PEC) etching is a rapid and inexpensive means of etching GaN, InGaN, and related materials for micro-electro-mechanical systems (MEMS) applications. In this work, we show that bandgap engineering of GaN/InGaN heterostructures can be used to exert substantial control over PEC etching and achieve strain-free cantilevers. A single, 200-nm thick layer InGaN was selectively etched using bandgap-selective PEC etch. We show that the use of highly doped guard layers to confine photogenerated holes uniformly across the InGaN layer enables a uniform, fast, and effective PEC etch. This approach enables complete uniform etching using PEC and could enable many optical and MEMS devices.</description><subject>Applied physics</subject><subject>Energy gap</subject><subject>Etching</subject><subject>Gallium nitrides</subject><subject>Heterostructures</subject><subject>Mechanical systems</subject><subject>Microelectromechanical systems</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkM1qwzAQhEVpoWnaQ99A0FMPTrSS9eNjCWkaCO2l7dXI8jp2SKRUlg95-zoksOwy8LEzDCHPwGbAlJjDLDdGmILdkAkwrTMBYG7JhDEmMlVIuCcPfb8bpeRCTMjv0mPcnmhlfU3RbzuPGDu_pU2I9NiGFHCPLsXgWjx0zu4pJteegdDQlf2cr_24aYsJY-hTHFwaIvaP5K6x-x6frndKft6X34uPbPO1Wi_eNpnjUqcsr2tUTkumIOfOqcY4WzkmrAJECQU3mguZK1EZIVmhUBccKg7aKcPGEVPycvl7jOFvwD6VuzBEP1qWHLiSBUgBI_V6odyYsY_YlMfYHWw8lcDKc20llNfaxD9TGV4d</recordid><startdate>20140616</startdate><enddate>20140616</enddate><creator>Ramesh, Prashanth</creator><creator>Krishnamoorthy, Sriram</creator><creator>Rajan, Siddharth</creator><creator>Washington, Gregory N.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140616</creationdate><title>Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures</title><author>Ramesh, Prashanth ; Krishnamoorthy, Sriram ; Rajan, Siddharth ; Washington, Gregory N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-4dde6c7506142cc6f8cabc03a61ee519287235463b835096e7921b217c6806803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Energy gap</topic><topic>Etching</topic><topic>Gallium nitrides</topic><topic>Heterostructures</topic><topic>Mechanical systems</topic><topic>Microelectromechanical systems</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ramesh, Prashanth</creatorcontrib><creatorcontrib>Krishnamoorthy, Sriram</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><creatorcontrib>Washington, Gregory N.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ramesh, Prashanth</au><au>Krishnamoorthy, Sriram</au><au>Rajan, Siddharth</au><au>Washington, Gregory N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures</atitle><jtitle>Applied physics letters</jtitle><date>2014-06-16</date><risdate>2014</risdate><volume>104</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Photoelectrochemical (PEC) etching is a rapid and inexpensive means of etching GaN, InGaN, and related materials for micro-electro-mechanical systems (MEMS) applications. In this work, we show that bandgap engineering of GaN/InGaN heterostructures can be used to exert substantial control over PEC etching and achieve strain-free cantilevers. A single, 200-nm thick layer InGaN was selectively etched using bandgap-selective PEC etch. We show that the use of highly doped guard layers to confine photogenerated holes uniformly across the InGaN layer enables a uniform, fast, and effective PEC etch. This approach enables complete uniform etching using PEC and could enable many optical and MEMS devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4883890</doi></addata></record>
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source	AIP Journals Complete; Alma/SFX Local Collection
subjects	Applied physics Energy gap Etching Gallium nitrides Heterostructures Mechanical systems Microelectromechanical systems
title	Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T17%3A57%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Energy%20band%20engineering%20for%20photoelectrochemical%20etching%20of%20GaN/InGaN%20heterostructures&rft.jtitle=Applied%20physics%20letters&rft.au=Ramesh,%20Prashanth&rft.date=2014-06-16&rft.volume=104&rft.issue=24&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4883890&rft_dat=%3Cproquest_cross%3E2126591531%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2126591531&rft_id=info:pmid/&rfr_iscdi=true