The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier

The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier

We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the i...

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Veröffentlicht in:Applied physics letters 2014-06, Vol.104 (22)
Hauptverfasser: Volkov, N. V., Tarasov, A. S., Smolyakov, D. A., Gustaitsev, A. O., Balashev, V. V., Korobtsov, V. V.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Bias
Ferromagnetic materials
Giant magnetoimpedance
Hybrid structures
Insulators
Magnetic fields
Magnetism
Magnetoresistance
Magnetoresistivity
MIS (semiconductors)
Semiconductor diodes
Silicon dioxide
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Zusammenfassung:We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4881715