Concentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As

In contrast to prior reports, evidence of concentration-dependent diffusion is reported for Si implanted In0.53Ga0.47As. The Fickian and concentration-dependent components of diffusivities were extracted using the Florida object oriented process and device simulator. The migration energy for silicon diffusion in In0.53Ga0.47As was calculated to be 2.4 and 1.5 eV for the Fickian and concentration dependent components of diffusion, respectively. A lack of change in diffusivities at given anneal temperatures suggest that transient-enhanced diffusion has not occurred. Due to these findings, silicon diffusion at high doping concentrations (>1 × 1020 cm−3) should be better characterized and understood for future complimentary metal-oxide semiconductor applications.