Self-repairing characteristics in the solid-state Al2O3 film capacitors
The effect of the top electrode material on electrical characteristics of Al2O3 thin film capacitors has been investigated. Compared to devices with Pt top electrodes, devices using Al as the top electrode material exhibit a significantly reduced leakage current and a much higher breakdown strength....
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| Veröffentlicht in: | Applied physics letters 2014-07, Vol.105 (3) |
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| container_title | Applied physics letters |
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| creator | Hu, Baofu Yao, Manwen Xiao, Ruihua Chen, Jianwen Yao, Xi |
| description | The effect of the top electrode material on electrical characteristics of Al2O3 thin film capacitors has been investigated. Compared to devices with Pt top electrodes, devices using Al as the top electrode material exhibit a significantly reduced leakage current and a much higher breakdown strength. These electrical characteristics are linked to the anodic oxidation reaction, which makes the capacitors have the capability of self-repairing the defects in a high electric field. |
| doi_str_mv | 10.1063/1.4890673 |
| format | Article |
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Compared to devices with Pt top electrodes, devices using Al as the top electrode material exhibit a significantly reduced leakage current and a much higher breakdown strength. These electrical characteristics are linked to the anodic oxidation reaction, which makes the capacitors have the capability of self-repairing the defects in a high electric field.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4890673</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum oxide ; Anodizing ; Applied physics ; Capacitors ; Electrode materials ; Electrodes ; Leakage current ; Maintenance ; Oxidation ; Thin films</subject><ispartof>Applied physics letters, 2014-07, Vol.105 (3)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-998566de7f8f8cc92ebdf110343bf5bc6adc904f5743fe9d84d5f934feca19a53</citedby><cites>FETCH-LOGICAL-c257t-998566de7f8f8cc92ebdf110343bf5bc6adc904f5743fe9d84d5f934feca19a53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Hu, Baofu</creatorcontrib><creatorcontrib>Yao, Manwen</creatorcontrib><creatorcontrib>Xiao, Ruihua</creatorcontrib><creatorcontrib>Chen, Jianwen</creatorcontrib><creatorcontrib>Yao, Xi</creatorcontrib><title>Self-repairing characteristics in the solid-state Al2O3 film capacitors</title><title>Applied physics letters</title><description>The effect of the top electrode material on electrical characteristics of Al2O3 thin film capacitors has been investigated. Compared to devices with Pt top electrodes, devices using Al as the top electrode material exhibit a significantly reduced leakage current and a much higher breakdown strength. These electrical characteristics are linked to the anodic oxidation reaction, which makes the capacitors have the capability of self-repairing the defects in a high electric field.</description><subject>Aluminum oxide</subject><subject>Anodizing</subject><subject>Applied physics</subject><subject>Capacitors</subject><subject>Electrode materials</subject><subject>Electrodes</subject><subject>Leakage current</subject><subject>Maintenance</subject><subject>Oxidation</subject><subject>Thin films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkMFKAzEURYMoWKsL_yDgykVq3rxJMlmWolUodKGuQ5pJbMq0Mybpwr93Sru6XLjcA4eQR-Az4BJfYFY3mkuFV2QCXCmGAM01mXDOkUkt4Jbc5bwbq6gQJ2T56bvAkh9sTPHwQ93WJuuKTzGX6DKNB1q2nua-iy3LxRZP5121Rhpit6fODtbF0qd8T26C7bJ_uOSUfL-9fi3e2Wq9_FjMV8xVQhWmdSOkbL0KTWic05XftAGAY42bIDZO2tZpXgehagxet03diqCxDt5Z0FbglDydf4fU_x59LmbXH9NhRJoKKimUGgHj6vm8cqnPOflghhT3Nv0Z4ObkyYC5eMJ_GcpZ0Q</recordid><startdate>20140721</startdate><enddate>20140721</enddate><creator>Hu, Baofu</creator><creator>Yao, Manwen</creator><creator>Xiao, Ruihua</creator><creator>Chen, Jianwen</creator><creator>Yao, Xi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140721</creationdate><title>Self-repairing characteristics in the solid-state Al2O3 film capacitors</title><author>Hu, Baofu ; Yao, Manwen ; Xiao, Ruihua ; Chen, Jianwen ; Yao, Xi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-998566de7f8f8cc92ebdf110343bf5bc6adc904f5743fe9d84d5f934feca19a53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Aluminum oxide</topic><topic>Anodizing</topic><topic>Applied physics</topic><topic>Capacitors</topic><topic>Electrode materials</topic><topic>Electrodes</topic><topic>Leakage current</topic><topic>Maintenance</topic><topic>Oxidation</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hu, Baofu</creatorcontrib><creatorcontrib>Yao, Manwen</creatorcontrib><creatorcontrib>Xiao, Ruihua</creatorcontrib><creatorcontrib>Chen, Jianwen</creatorcontrib><creatorcontrib>Yao, Xi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hu, Baofu</au><au>Yao, Manwen</au><au>Xiao, Ruihua</au><au>Chen, Jianwen</au><au>Yao, Xi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Self-repairing characteristics in the solid-state Al2O3 film capacitors</atitle><jtitle>Applied physics letters</jtitle><date>2014-07-21</date><risdate>2014</risdate><volume>105</volume><issue>3</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The effect of the top electrode material on electrical characteristics of Al2O3 thin film capacitors has been investigated. Compared to devices with Pt top electrodes, devices using Al as the top electrode material exhibit a significantly reduced leakage current and a much higher breakdown strength. These electrical characteristics are linked to the anodic oxidation reaction, which makes the capacitors have the capability of self-repairing the defects in a high electric field.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4890673</doi></addata></record> |
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| ispartof | Applied physics letters, 2014-07, Vol.105 (3) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Aluminum oxide Anodizing Applied physics Capacitors Electrode materials Electrodes Leakage current Maintenance Oxidation Thin films |
| title | Self-repairing characteristics in the solid-state Al2O3 film capacitors |
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