Time resolved photoluminescence spectroscopy of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well heterostructures

Time resolved photoluminescence spectroscopy of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well heterostructures

Photoluminescence (PL) spectra and kinetics of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well (QW) heterostructures grown by molecular beam epitaxy technique are studied. Interband PL spectra are observed from 18 K up to the room temperature. Time resolved studies reveal an additional PL line with sl...

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Veröffentlicht in:Applied physics letters 2014-07, Vol.105 (2)
Hauptverfasser: Morozov, S. V., Rumyantsev, V. V., Antonov, A. V., Kadykov, A. M., Maremyanin, K. V., Kudryavtsev, K. E., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Barrier layers
Carrier injection
Epitaxial growth
Heterostructures
Mercury cadmium tellurides
Molecular beam epitaxy
Photoluminescence
Quantum wells
Spectrum analysis
Waveguides
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Zusammenfassung:Photoluminescence (PL) spectra and kinetics of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well (QW) heterostructures grown by molecular beam epitaxy technique are studied. Interband PL spectra are observed from 18 K up to the room temperature. Time resolved studies reveal an additional PL line with slow kinetics (7 μs at 18 K) related to deep defect states in barrier layers. These states act as traps counteracting carrier injection into QWs. The decay time of PL signal from QW layers is about 5 μs showing that gain can be achieved at wavelengths 10–20 μm by placing such QWs in HgCdTe structures with waveguides.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4890416