Pentacene thin films on ferromagnetic oxide: Growth mechanism and spintronic devices
We investigated the growth mechanism of pentacene thin films on La0.7Sr0.3MnO3. A diffusion limited, thermally activated growth was found. Pentacene molecules formed flat islands that were a few microns in size and whose growth during deposition showed a strong anisotropy. We extracted a nucleation...
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| Veröffentlicht in: | Applied physics letters 2014-07, Vol.105 (2) |
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| container_title | Applied physics letters |
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| creator | Graziosi, P. Riminucci, A. Prezioso, M. Newby, C. Brunel, D. Bergenti, I. Pullini, D. Busquets-Mataix, D. Ghidini, M. Dediu, V. A. |
| description | We investigated the growth mechanism of pentacene thin films on La0.7Sr0.3MnO3. A diffusion limited, thermally activated growth was found. Pentacene molecules formed flat islands that were a few microns in size and whose growth during deposition showed a strong anisotropy. We extracted a nucleation energy of 0.65 ± 0.05 eV and a diffusion barrier energy of 0.7 ± 0.2 eV. We also estimated a critical nucleus size of three molecules. We show that vertical pentacene-based spintronic devices with La0.7Sr0.3MnO3 and Co electrodes demonstrated magnetoresistive effects up to room temperature. We also propose a route for pentacene-based spintronic devices improvement. |
| doi_str_mv | 10.1063/1.4890328 |
| format | Article |
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We also propose a route for pentacene-based spintronic devices improvement.</description><subject>Anisotropy</subject><subject>Applied physics</subject><subject>Diffusion barriers</subject><subject>Electrons</subject><subject>Ferromagnetic materials</subject><subject>Magnetoresistivity</subject><subject>Nucleation</subject><subject>Thin films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEYhIMoWKsH_0HAk4eteZPdbNabFK1CQQ_1vGSzb2xKN6lJ6se_d6U9zQw8zMAQcg1sBkyKO5iVqmGCqxMyAVbXhQBQp2TCGBOFbCo4JxcpbcZYcSEmZPWGPmuDHmleO0-t2w6JhtFgjGHQHx6zMzT8uB7v6SKG77ymA5q19i4NVPuepp3zOQY_Yj1-OYPpkpxZvU14ddQpeX96XM2fi-Xr4mX-sCyMqFQuJEdtUXWcqVKCRBCMWwuNZaIB5GjK3ljNsOIotNRg60p1neZK6hrrDsWU3Bx6dzF87jHldhP20Y-TLQcuq7qUtRqp2wNlYkgpom130Q06_rbA2v_TWmiPp4k_B2lfJQ</recordid><startdate>20140714</startdate><enddate>20140714</enddate><creator>Graziosi, P.</creator><creator>Riminucci, A.</creator><creator>Prezioso, M.</creator><creator>Newby, C.</creator><creator>Brunel, D.</creator><creator>Bergenti, I.</creator><creator>Pullini, D.</creator><creator>Busquets-Mataix, D.</creator><creator>Ghidini, M.</creator><creator>Dediu, V. 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A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pentacene thin films on ferromagnetic oxide: Growth mechanism and spintronic devices</atitle><jtitle>Applied physics letters</jtitle><date>2014-07-14</date><risdate>2014</risdate><volume>105</volume><issue>2</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We investigated the growth mechanism of pentacene thin films on La0.7Sr0.3MnO3. A diffusion limited, thermally activated growth was found. Pentacene molecules formed flat islands that were a few microns in size and whose growth during deposition showed a strong anisotropy. We extracted a nucleation energy of 0.65 ± 0.05 eV and a diffusion barrier energy of 0.7 ± 0.2 eV. We also estimated a critical nucleus size of three molecules. We show that vertical pentacene-based spintronic devices with La0.7Sr0.3MnO3 and Co electrodes demonstrated magnetoresistive effects up to room temperature. 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| ispartof | Applied physics letters, 2014-07, Vol.105 (2) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Anisotropy Applied physics Diffusion barriers Electrons Ferromagnetic materials Magnetoresistivity Nucleation Thin films |
| title | Pentacene thin films on ferromagnetic oxide: Growth mechanism and spintronic devices |
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