Pentacene thin films on ferromagnetic oxide: Growth mechanism and spintronic devices

We investigated the growth mechanism of pentacene thin films on La0.7Sr0.3MnO3. A diffusion limited, thermally activated growth was found. Pentacene molecules formed flat islands that were a few microns in size and whose growth during deposition showed a strong anisotropy. We extracted a nucleation...

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Veröffentlicht in:Applied physics letters 2014-07, Vol.105 (2)
Hauptverfasser: Graziosi, P., Riminucci, A., Prezioso, M., Newby, C., Brunel, D., Bergenti, I., Pullini, D., Busquets-Mataix, D., Ghidini, M., Dediu, V. A.
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Sprache:eng
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Zusammenfassung:We investigated the growth mechanism of pentacene thin films on La0.7Sr0.3MnO3. A diffusion limited, thermally activated growth was found. Pentacene molecules formed flat islands that were a few microns in size and whose growth during deposition showed a strong anisotropy. We extracted a nucleation energy of 0.65 ± 0.05 eV and a diffusion barrier energy of 0.7 ± 0.2 eV. We also estimated a critical nucleus size of three molecules. We show that vertical pentacene-based spintronic devices with La0.7Sr0.3MnO3 and Co electrodes demonstrated magnetoresistive effects up to room temperature. We also propose a route for pentacene-based spintronic devices improvement.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4890328