Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

The Ag/SiO2/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ∼102, satisfactory endurance of >500 cycles, good retention property of >2000 s, and fast operation speed of

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Veröffentlicht in:Applied physics letters 2014-08, Vol.105 (6)
Hauptverfasser: Gao, S., Chen, C., Zhai, Z., Liu, H. Y., Lin, Y. S., Li, S. Z., Lu, S. H., Wang, G. Y., Song, C., Zeng, F., Pan, F.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Indium tin oxides
Measurement
Point contact
Resistance
Silicon dioxide
Switching
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Zusammenfassung:The Ag/SiO2/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ∼102, satisfactory endurance of >500 cycles, good retention property of >2000 s, and fast operation speed of
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4893277