High-performance chemical-bath deposited CdS thin-film transistors with ZrO2 gate dielectric

High-performance chemical-bath deposited CdS thin-film transistors with ZrO2 gate dielectric

We demonstrate high performance chemical bath deposited CdS thin-film transistors (TFTs) using atomic layer deposited ZrO2 based high-k gate dielectric material. Our unique way of isolation of the CdS-based TFTs devices yielded significantly low leakage current as well as remarkable lower operating...

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Veröffentlicht in:Applied physics letters 2014-08, Vol.105 (5)
Hauptverfasser: Dondapati, Hareesh, Ha, Duc, Jenrette, Erin, Xiao, Bo, Pradhan, A. K.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Cadmium sulfide
Dielectrics
Electronic devices
Leakage current
Organic chemistry
Semiconductor devices
Silicon
Silicon dioxide
Thin film transistors
Threshold voltage
Transistors
Zirconium dioxide
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Zusammenfassung:We demonstrate high performance chemical bath deposited CdS thin-film transistors (TFTs) using atomic layer deposited ZrO2 based high-k gate dielectric material. Our unique way of isolation of the CdS-based TFTs devices yielded significantly low leakage current as well as remarkable lower operating voltages (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4892578