Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor
We report on room-temperature negative transconductance (NTC) in axial Si/Ge hetero-nanowire tunneling field-effect transistors. The NTC produces a current peak-to-valley ratio >45, a high value for a Si-based device. We characterize the NTC over a range of gate VG and drain VD voltages, finding...
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Veröffentlicht in: | Applied Physics Letters, 105(6):Article No. 062106 105(6):Article No. 062106, 2014-08, Vol.105 (6) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report on room-temperature negative transconductance (NTC) in axial Si/Ge hetero-nanowire tunneling field-effect transistors. The NTC produces a current peak-to-valley ratio >45, a high value for a Si-based device. We characterize the NTC over a range of gate VG and drain VD voltages, finding that NTC persists down to VD = −50 mV. The physical mechanism responsible for the NTC is the VG-induced depletion in the p-Ge section that eventually reduces the maximum electric field that triggers the tunneling ID, as confirmed via three-dimensional (3D) technology computer-aided design simulations. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4892950 |