Carrier transfer across a 2D-3D semiconductor heterointerface: The role of momentum mismatch
Two-dimensional (2D) transition metal dichalogenides exhibit a unique band structure: In contrast to many direct-gap classical semiconductors, their band-gap minimum is not at the center of the Brillouin zone, but at finite values of the k vector. We report on clear indications that this momentum mi...
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Veröffentlicht in: | Physical review. B 2017-02, Vol.95 (8), Article 081304 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Two-dimensional (2D) transition metal dichalogenides exhibit a unique band structure: In contrast to many direct-gap classical semiconductors, their band-gap minimum is not at the center of the Brillouin zone, but at finite values of the k vector. We report on clear indications that this momentum mismatch fundamentally influences the carrier transfer between a 2D WS2 crystal and a three-dimensional (3D) GaN layer: Populating different local band extrema of the WS2 in k space by selective laser excitation leads to a pronounced difference in the WS2 photoluminescence signal. These findings may be of high importance for future 2D-3D semiconductor devices. |
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ISSN: | 2469-9950 2469-9969 |
DOI: | 10.1103/PhysRevB.95.081304 |