Optical absorption by dilute GaNSb alloys: Influence of N pair states

The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states inter...

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Veröffentlicht in:Applied physics letters 2013-07, Vol.103 (4)
Hauptverfasser: Mudd, J. J., Kybert, N. J., Linhart, W. M., Buckle, L., Ashley, T., King, P. D. C., Jones, T. S., Ashwin, M. J., Veal, T. D.
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Sprache:eng
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Zusammenfassung:The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4816519