Bit patterned media optimization at 1 Tdot/in2 by post-annealing

We report on the fabrication of 1 Tdot/in2 bit patterned media with high coercivity (HC) and narrow intrinsic switching field distribution (iSFD) based on nanoimprint from a master pattern formed by e-beam guided block copolymer assembly onto a carbon hard mask and subsequent pattern transfer via etching into a thin CoCrPt perpendicular anisotropy recording layer. We demonstrate that an additional vacuum annealing step after pattern transfer into the CoCrPt layer and after Carbon hard mask removal not only yields recovery from undesired damage of the island edges, but actually transforms the islands into a magnetically more favorable compositional phase with higher HC, lower iSFD/HC, and three-fold increased thermal stability. Energy filtered transmission electron microscopy analysis reveals that the diffusion of Cr from the island cores to the periphery of the islands during post-annealing is responsible for the transformation of the magnetic bits into a more stable state.