Incorporation of Ge on High K Dielectric Material for Different Fabrication Technologies (HBT, CMOS) and Their Impact on Electrical Characteristics of the Device

The paper is composed of distinct reviews on various fabrication technologies of the CMOS family and the characterization of MOS capacitors. The initial part of the article essentially presents a systemic review on an already conducted work on different fabrication technologies such as Si MOSFET, Si...

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Veröffentlicht in:	Journal of nanomaterials 2018-01, Vol.2018 (2018), p.1-7
Hauptverfasser:	Khan, Zeeshan Najam, Shakeel, Sobia, Khan, Shayan Ali
Format:	Artikel
Sprache:	eng
Schlagworte:	Ambience Ammonia Broadband Capacitors CMOS Current leakage Electric fields Electrical properties Epitaxial growth Gates Germanium Indium phosphides Leakage current Metal oxides Millimeter waves MOSFETs Nanomaterials Performance measurement Photonics Silicon Silicon germanides Silicon substrates Surface preparation Transistors
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