Carrier transport in graphite/Si3N4-nanobelt/PtIr Schottky barrier diodes
Understanding the roles of contacts and interfaces between metals and semiconductors is critically important for exploring nanostructure-based nanodevices. The present study shed some light on the dominated mechanism of size-dependent carrier transfer in the Schottky barrier diodes configured by the...
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Veröffentlicht in: | Applied physics letters 2014-11, Vol.105 (19) |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Understanding the roles of contacts and interfaces between metals and semiconductors is critically important for exploring nanostructure-based nanodevices. The present study shed some light on the dominated mechanism of size-dependent carrier transfer in the Schottky barrier diodes configured by the Pt-Ir/Si3N4-nanobelt/graphite (metal-semiconductor-metal (MSM)) sandwiched structure via a conductive atomic force microscopy using nanobelts with various thicknesses. The observed I-V behaviors suggested that the charge transports under the low and high biases were dominated by the reverse-biased Schottky barrier and space-charge-limited current (SCLC), respectively. The intermediate region between the low and high biases presented the transition between the Ohmic and SCLC behaviors, in which the ≡Si and =N dangling bonds acted as the defects within the Si3N4 nanobelt surface are predominant in the charge transfer. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4901821 |