Carrier transport in graphite/Si3N4-nanobelt/PtIr Schottky barrier diodes

Understanding the roles of contacts and interfaces between metals and semiconductors is critically important for exploring nanostructure-based nanodevices. The present study shed some light on the dominated mechanism of size-dependent carrier transfer in the Schottky barrier diodes configured by the...

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Veröffentlicht in:Applied physics letters 2014-11, Vol.105 (19)
Hauptverfasser: Bi, Jinghui, Wei, Guodong, Shang, Minghui, Gao, Fengmei, Tang, Bin, Yang, Weiyou
Format: Artikel
Sprache:eng
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Zusammenfassung:Understanding the roles of contacts and interfaces between metals and semiconductors is critically important for exploring nanostructure-based nanodevices. The present study shed some light on the dominated mechanism of size-dependent carrier transfer in the Schottky barrier diodes configured by the Pt-Ir/Si3N4-nanobelt/graphite (metal-semiconductor-metal (MSM)) sandwiched structure via a conductive atomic force microscopy using nanobelts with various thicknesses. The observed I-V behaviors suggested that the charge transports under the low and high biases were dominated by the reverse-biased Schottky barrier and space-charge-limited current (SCLC), respectively. The intermediate region between the low and high biases presented the transition between the Ohmic and SCLC behaviors, in which the ≡Si and =N dangling bonds acted as the defects within the Si3N4 nanobelt surface are predominant in the charge transfer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901821