Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing
Zinc oxide thin film is one of the most promising candidates for the transparent conductive layer in microelectronic and photovoltaic applications, due to its low resistivity and high transmittance in the visible spectral range. In this letter, we present optoelectronic and structural properties of...
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| Veröffentlicht in: | Applied physics letters 2014-12, Vol.105 (22) |
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| container_title | Applied physics letters |
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| creator | Prucnal, S Gao Kun Zhou, Shengqiang Wu Jiada Cai Hua Gordan, Ovidiu D Zahn Dietrich R T Larkin, G Helm, M Skorupa, W |
| description | Zinc oxide thin film is one of the most promising candidates for the transparent conductive layer in microelectronic and photovoltaic applications, due to its low resistivity and high transmittance in the visible spectral range. In this letter, we present optoelectronic and structural properties of fluorine doped ZnO films deposited at low temperature on a silicon substrate. The fluorine doping was made by post-deposition SF6 plasma treatment and activation by the millisecond range flash lamp annealing. Both the microstructural and optical investigations confirm the formation of a high-quality, highly doped n-type ZnO layer. The current-voltage characteristics show a heterojunction between n+-ZnO and Si. Moreover, it is shown that the SF6 plasma treatment efficiently passivates the surface state and bulk defects in the ZnO film. |
| doi_str_mv | 10.1063/1.4903074 |
| format | Article |
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In this letter, we present optoelectronic and structural properties of fluorine doped ZnO films deposited at low temperature on a silicon substrate. The fluorine doping was made by post-deposition SF6 plasma treatment and activation by the millisecond range flash lamp annealing. Both the microstructural and optical investigations confirm the formation of a high-quality, highly doped n-type ZnO layer. The current-voltage characteristics show a heterojunction between n+-ZnO and Si. Moreover, it is shown that the SF6 plasma treatment efficiently passivates the surface state and bulk defects in the ZnO film.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4903074</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Annealing ; Applied physics ; Current voltage characteristics ; Flash lamps ; Fluorine ; Heterojunctions ; Optoelectronics ; Photovoltaic cells ; Plasma ; Silicon substrates ; Thin films ; Zinc oxide ; Zinc oxides</subject><ispartof>Applied physics letters, 2014-12, Vol.105 (22)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Prucnal, S</creatorcontrib><creatorcontrib>Gao Kun</creatorcontrib><creatorcontrib>Zhou, Shengqiang</creatorcontrib><creatorcontrib>Wu Jiada</creatorcontrib><creatorcontrib>Cai Hua</creatorcontrib><creatorcontrib>Gordan, Ovidiu D</creatorcontrib><creatorcontrib>Zahn Dietrich R T</creatorcontrib><creatorcontrib>Larkin, G</creatorcontrib><creatorcontrib>Helm, M</creatorcontrib><creatorcontrib>Skorupa, W</creatorcontrib><title>Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing</title><title>Applied physics letters</title><description>Zinc oxide thin film is one of the most promising candidates for the transparent conductive layer in microelectronic and photovoltaic applications, due to its low resistivity and high transmittance in the visible spectral range. In this letter, we present optoelectronic and structural properties of fluorine doped ZnO films deposited at low temperature on a silicon substrate. The fluorine doping was made by post-deposition SF6 plasma treatment and activation by the millisecond range flash lamp annealing. Both the microstructural and optical investigations confirm the formation of a high-quality, highly doped n-type ZnO layer. The current-voltage characteristics show a heterojunction between n+-ZnO and Si. Moreover, it is shown that the SF6 plasma treatment efficiently passivates the surface state and bulk defects in the ZnO film.</description><subject>Annealing</subject><subject>Applied physics</subject><subject>Current voltage characteristics</subject><subject>Flash lamps</subject><subject>Fluorine</subject><subject>Heterojunctions</subject><subject>Optoelectronics</subject><subject>Photovoltaic cells</subject><subject>Plasma</subject><subject>Silicon substrates</subject><subject>Thin films</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotj01LxDAYhIMoWFcP_oOA5675_jjK4qqw0IN68bKk7RvJkqa1yf5_A3p6mGGYYRC6p2RLieKPdCss4USLC9RQonXLKTWXqCGE8FZZSa_RTc6nKiXjvEG-W8oMEYayzikMeFnnBdYSIOPZ46_UYR_ihOeEc4hhqHS-wIrf9wov0eXJ4bKCKxOkgl0a8RRiDBlqcszVSOBiSN-36Mq7mOHunxv0uX_-2L22h-7lbfd0aBdqeGmp76lTzBHrjCWCG6WskXqUhPVWUzsqoj1wDZYL0WsthQQ_GmnsYDVI4Bv08Ndbf_ycIZfjaT6vqU4eGWVKWCsZ478Twlbt</recordid><startdate>20141201</startdate><enddate>20141201</enddate><creator>Prucnal, S</creator><creator>Gao Kun</creator><creator>Zhou, Shengqiang</creator><creator>Wu Jiada</creator><creator>Cai Hua</creator><creator>Gordan, Ovidiu D</creator><creator>Zahn Dietrich R T</creator><creator>Larkin, G</creator><creator>Helm, M</creator><creator>Skorupa, W</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20141201</creationdate><title>Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing</title><author>Prucnal, S ; Gao Kun ; Zhou, Shengqiang ; Wu Jiada ; Cai Hua ; Gordan, Ovidiu D ; Zahn Dietrich R T ; Larkin, G ; Helm, M ; Skorupa, W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p183t-1fb1a62a09a890438669857d502b9719d607fe37e9344b77545efd8589c97e5e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Annealing</topic><topic>Applied physics</topic><topic>Current voltage characteristics</topic><topic>Flash lamps</topic><topic>Fluorine</topic><topic>Heterojunctions</topic><topic>Optoelectronics</topic><topic>Photovoltaic cells</topic><topic>Plasma</topic><topic>Silicon substrates</topic><topic>Thin films</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Prucnal, S</creatorcontrib><creatorcontrib>Gao Kun</creatorcontrib><creatorcontrib>Zhou, Shengqiang</creatorcontrib><creatorcontrib>Wu Jiada</creatorcontrib><creatorcontrib>Cai Hua</creatorcontrib><creatorcontrib>Gordan, Ovidiu D</creatorcontrib><creatorcontrib>Zahn Dietrich R T</creatorcontrib><creatorcontrib>Larkin, G</creatorcontrib><creatorcontrib>Helm, M</creatorcontrib><creatorcontrib>Skorupa, W</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Prucnal, S</au><au>Gao Kun</au><au>Zhou, Shengqiang</au><au>Wu Jiada</au><au>Cai Hua</au><au>Gordan, Ovidiu D</au><au>Zahn Dietrich R T</au><au>Larkin, G</au><au>Helm, M</au><au>Skorupa, W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing</atitle><jtitle>Applied physics letters</jtitle><date>2014-12-01</date><risdate>2014</risdate><volume>105</volume><issue>22</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Zinc oxide thin film is one of the most promising candidates for the transparent conductive layer in microelectronic and photovoltaic applications, due to its low resistivity and high transmittance in the visible spectral range. 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| ispartof | Applied physics letters, 2014-12, Vol.105 (22) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Annealing Applied physics Current voltage characteristics Flash lamps Fluorine Heterojunctions Optoelectronics Photovoltaic cells Plasma Silicon substrates Thin films Zinc oxide Zinc oxides |
| title | Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing |
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