Terahertz surface emission from Cu2ZnSnSe4 thin film photovoltaic material excited by femtosecond laser pulses

Terahertz surface emission from Cu2ZnSnSe4 thin film photovoltaic material excited by femtosecond laser pulses

We observed efficient terahertz (THz) emission from sol-gel grown Cu2ZnSnSe4 (CZTSe) thin films using THz time domain spectroscopy technique. The THz emission bandwidth exceeds 2 THz with a dynamic range of 20 dB in the amplitude spectrum. The THz emission amplitude from CZTSe is found to be indepen...

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Veröffentlicht in:Applied physics letters 2014-12, Vol.105 (23)
Hauptverfasser: Zhao, Zhenyu, Niehues, Gudrun, Funkner, Stefan, Estacio, Elmer, Han, Qifeng, Yamamoto, Kohji, Zhang, Jingtao, Shi, Wangzhou, Guo, Qixin, Tani, Masahiko
Format: Artikel
Sprache:eng
Schlagworte:
Amplitudes
Applied physics
Copper zinc tin selenide
Dependence
Femtosecond pulses
Fluence
Polarity
Sol-gel processes
Thin films
Time domain analysis
Waveforms
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Zusammenfassung:We observed efficient terahertz (THz) emission from sol-gel grown Cu2ZnSnSe4 (CZTSe) thin films using THz time domain spectroscopy technique. The THz emission bandwidth exceeds 2 THz with a dynamic range of 20 dB in the amplitude spectrum. The THz emission amplitude from CZTSe is found to be independent of external magnetic fields. Comparing the polarity of THz emission waveforms of CZTSe and GaAs, we suggest that the acceleration of photo-carriers in the surface accumulation layer of CZTSe is the dominant mechanism of radiation emission. Optical excitation fluence dependence measurements show that the saturation fluence of the CZTSe thin film reaches 1.48 μJ/cm2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4903740