Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al2O3 onto exfoliated molybdenum disulfide (MoS2) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS2 by means of a metal oxide buffer layer can effectiv...

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Veröffentlicht in:	Applied physics letters 2015-01, Vol.106 (2)
Hauptverfasser:	Son, Seokki, Yu, Sunmoon, Choi, Moonseok, Kim, Dohyung, Choi, Changhwan
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Applied physics Atomic layer epitaxy Buffer layers High temperature Metal oxides Molybdenum disulfide Nucleation Photovoltaic cells
Online-Zugang:	Volltext
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