Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis
We report on a highly improved CO2 to HCOOH conversion system using a tandem photo-electrode (TPE) of InGaN and two Si p-n junctions. To improve its efficiency, narrow-band-gap InGaN was applied as the photo-absorption layer. In the TPE structure, the current matching between GaN-based photo-absorpt...
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| Veröffentlicht in: | Applied physics letters 2015-02, Vol.106 (7) |
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| container_title | Applied physics letters |
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| creator | Sekimoto, Takeyuki Shinagawa, Shuichi Uetake, Yusuke Noda, Keiichi Deguchi, Masahiro Yotsuhashi, Satoshi Ohkawa, Kazuhiro |
| description | We report on a highly improved CO2 to HCOOH conversion system using a tandem photo-electrode (TPE) of InGaN and two Si p-n junctions. To improve its efficiency, narrow-band-gap InGaN was applied as the photo-absorption layer. In the TPE structure, the current matching between GaN-based photo-absorption layer and two Si p-n junctions is crucial for the improvement of the efficiency. The energy conversion efficiency for HCOOH production reached 0.97%, which is greater than average of global biological photosynthetic one. |
| doi_str_mv | 10.1063/1.4910510 |
| format | Article |
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| ispartof | Applied physics letters, 2015-02, Vol.106 (7) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Absorption Applied physics Carbon dioxide Efficiency Electrodes Energy conversion efficiency P-n junctions Photosynthesis |
| title | Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis |
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