Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis

Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis

We report on a highly improved CO2 to HCOOH conversion system using a tandem photo-electrode (TPE) of InGaN and two Si p-n junctions. To improve its efficiency, narrow-band-gap InGaN was applied as the photo-absorption layer. In the TPE structure, the current matching between GaN-based photo-absorpt...

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Veröffentlicht in:Applied physics letters 2015-02, Vol.106 (7)
Hauptverfasser: Sekimoto, Takeyuki, Shinagawa, Shuichi, Uetake, Yusuke, Noda, Keiichi, Deguchi, Masahiro, Yotsuhashi, Satoshi, Ohkawa, Kazuhiro
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Applied physics
Carbon dioxide
Efficiency
Electrodes
Energy conversion efficiency
P-n junctions
Photosynthesis
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Zusammenfassung:We report on a highly improved CO2 to HCOOH conversion system using a tandem photo-electrode (TPE) of InGaN and two Si p-n junctions. To improve its efficiency, narrow-band-gap InGaN was applied as the photo-absorption layer. In the TPE structure, the current matching between GaN-based photo-absorption layer and two Si p-n junctions is crucial for the improvement of the efficiency. The energy conversion efficiency for HCOOH production reached 0.97%, which is greater than average of global biological photosynthetic one.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4910510