Perovskite LaRhO3 as a p -type active layer in oxide photovoltaics
Perovskite-type transition-metal oxides have a wide variety of physical properties and triggered intensive research on functional devices in the form of heteroepitaxial junctions. However, there is a missing component that is a p-type conventional band semiconductor. LaRhO3 (LRO) is one of very few...
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| Veröffentlicht in: | Applied physics letters 2015-02, Vol.106 (7) |
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| creator | Nakamura, Masao Krockenberger, Yoshiharu Fujioka, Jun Kawasaki, Masashi Tokura, Yoshinori |
| description | Perovskite-type transition-metal oxides have a wide variety of physical properties and triggered intensive research on functional devices in the form of heteroepitaxial junctions. However, there is a missing component that is a p-type conventional band semiconductor. LaRhO3 (LRO) is one of very few promising candidates having its bandgap between filled t2g and empty eg of Rh in low-spin state, but there has been no report on the synthesis of large-size single crystals or thin films. Here, we report on the junction properties of single-crystalline thin films of LRO grown on (110) oriented Nb-doped SrTiO3 substrates. The external quantum efficiency of the photo-electron conversion exceeds 1% in the visible-light region due to the wide depletion layer and long diffusion length of minority carriers in LRO. Clear indication of p-type band semiconducting character in a perovskite oxide of LRO will pave a way to explore oxide electronics of perovskite heterostructures. |
| doi_str_mv | 10.1063/1.4909512 |
| format | Article |
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However, there is a missing component that is a p-type conventional band semiconductor. LaRhO3 (LRO) is one of very few promising candidates having its bandgap between filled t2g and empty eg of Rh in low-spin state, but there has been no report on the synthesis of large-size single crystals or thin films. Here, we report on the junction properties of single-crystalline thin films of LRO grown on (110) oriented Nb-doped SrTiO3 substrates. The external quantum efficiency of the photo-electron conversion exceeds 1% in the visible-light region due to the wide depletion layer and long diffusion length of minority carriers in LRO. Clear indication of p-type band semiconducting character in a perovskite oxide of LRO will pave a way to explore oxide electronics of perovskite heterostructures.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4909512</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Diffusion layers ; Diffusion length ; Heterostructures ; Minority carriers ; P-type semiconductors ; Perovskites ; Photovoltaic cells ; Physical properties ; Quantum efficiency ; Single crystals ; Solar cells ; Strontium titanates ; Substrates ; Thin films ; Transition metal oxides ; Transition metals</subject><ispartof>Applied physics letters, 2015-02, Vol.106 (7)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-cbc761bb3f73638c985ed881ae32e1ff6a6348a08ff5f526ccac3af5f75b25523</citedby><cites>FETCH-LOGICAL-c323t-cbc761bb3f73638c985ed881ae32e1ff6a6348a08ff5f526ccac3af5f75b25523</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Nakamura, Masao</creatorcontrib><creatorcontrib>Krockenberger, Yoshiharu</creatorcontrib><creatorcontrib>Fujioka, Jun</creatorcontrib><creatorcontrib>Kawasaki, Masashi</creatorcontrib><creatorcontrib>Tokura, Yoshinori</creatorcontrib><title>Perovskite LaRhO3 as a p -type active layer in oxide photovoltaics</title><title>Applied physics letters</title><description>Perovskite-type transition-metal oxides have a wide variety of physical properties and triggered intensive research on functional devices in the form of heteroepitaxial junctions. However, there is a missing component that is a p-type conventional band semiconductor. LaRhO3 (LRO) is one of very few promising candidates having its bandgap between filled t2g and empty eg of Rh in low-spin state, but there has been no report on the synthesis of large-size single crystals or thin films. Here, we report on the junction properties of single-crystalline thin films of LRO grown on (110) oriented Nb-doped SrTiO3 substrates. The external quantum efficiency of the photo-electron conversion exceeds 1% in the visible-light region due to the wide depletion layer and long diffusion length of minority carriers in LRO. Clear indication of p-type band semiconducting character in a perovskite oxide of LRO will pave a way to explore oxide electronics of perovskite heterostructures.</description><subject>Applied physics</subject><subject>Diffusion layers</subject><subject>Diffusion length</subject><subject>Heterostructures</subject><subject>Minority carriers</subject><subject>P-type semiconductors</subject><subject>Perovskites</subject><subject>Photovoltaic cells</subject><subject>Physical properties</subject><subject>Quantum efficiency</subject><subject>Single crystals</subject><subject>Solar cells</subject><subject>Strontium titanates</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Transition metal oxides</subject><subject>Transition metals</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotkEtLAzEUhYMoWEcX_oOAKxdTc3ObTGapxRcUKqLrkEkTOrU2Y5IW---NtKt7LudwHx8h18DGwCTewXjSslYAPyEjYE1TI4A6JSPGGNayGOfkIqVVaQVHHJGHNxfDLn312dGZeV_OkZpEDR1onfeDo8bmfufo2uxdpP2Ght9-4eiwDDnswjqb3qZLcubNOrmrY63I59Pjx_Slns2fX6f3s9oix1zbzjYSug59gxKVbZVwC6XAOOQOvJdG4kQZprwXXnBprbFoim5Ex0W5tiI3h7lDDD9bl7JehW3clJWaAy9vs7YQqMjtIWVjSCk6r4fYf5u418D0PyIN-ogI_wBjP1cX</recordid><startdate>20150216</startdate><enddate>20150216</enddate><creator>Nakamura, Masao</creator><creator>Krockenberger, Yoshiharu</creator><creator>Fujioka, Jun</creator><creator>Kawasaki, Masashi</creator><creator>Tokura, Yoshinori</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150216</creationdate><title>Perovskite LaRhO3 as a p -type active layer in oxide photovoltaics</title><author>Nakamura, Masao ; Krockenberger, Yoshiharu ; Fujioka, Jun ; Kawasaki, Masashi ; Tokura, Yoshinori</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-cbc761bb3f73638c985ed881ae32e1ff6a6348a08ff5f526ccac3af5f75b25523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Diffusion layers</topic><topic>Diffusion length</topic><topic>Heterostructures</topic><topic>Minority carriers</topic><topic>P-type semiconductors</topic><topic>Perovskites</topic><topic>Photovoltaic cells</topic><topic>Physical properties</topic><topic>Quantum efficiency</topic><topic>Single crystals</topic><topic>Solar cells</topic><topic>Strontium titanates</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Transition metal oxides</topic><topic>Transition metals</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakamura, Masao</creatorcontrib><creatorcontrib>Krockenberger, Yoshiharu</creatorcontrib><creatorcontrib>Fujioka, Jun</creatorcontrib><creatorcontrib>Kawasaki, Masashi</creatorcontrib><creatorcontrib>Tokura, Yoshinori</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakamura, Masao</au><au>Krockenberger, Yoshiharu</au><au>Fujioka, Jun</au><au>Kawasaki, Masashi</au><au>Tokura, Yoshinori</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Perovskite LaRhO3 as a p -type active layer in oxide photovoltaics</atitle><jtitle>Applied physics letters</jtitle><date>2015-02-16</date><risdate>2015</risdate><volume>106</volume><issue>7</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Perovskite-type transition-metal oxides have a wide variety of physical properties and triggered intensive research on functional devices in the form of heteroepitaxial junctions. However, there is a missing component that is a p-type conventional band semiconductor. LaRhO3 (LRO) is one of very few promising candidates having its bandgap between filled t2g and empty eg of Rh in low-spin state, but there has been no report on the synthesis of large-size single crystals or thin films. Here, we report on the junction properties of single-crystalline thin films of LRO grown on (110) oriented Nb-doped SrTiO3 substrates. The external quantum efficiency of the photo-electron conversion exceeds 1% in the visible-light region due to the wide depletion layer and long diffusion length of minority carriers in LRO. Clear indication of p-type band semiconducting character in a perovskite oxide of LRO will pave a way to explore oxide electronics of perovskite heterostructures.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4909512</doi></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Diffusion layers Diffusion length Heterostructures Minority carriers P-type semiconductors Perovskites Photovoltaic cells Physical properties Quantum efficiency Single crystals Solar cells Strontium titanates Substrates Thin films Transition metal oxides Transition metals |
| title | Perovskite LaRhO3 as a p -type active layer in oxide photovoltaics |
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