Full-range electrical characteristics of WS2 transistors

Full-range electrical characteristics of WS2 transistors

We fabricated transistors formed by few layers to bulk single crystal WS2 to quantify the factors governing charge transport. We established a capacitor network to analyze the full-range electrical characteristics of the channel, highlighting the role of quantum capacitance and interface trap densit...

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Veröffentlicht in:Applied physics letters 2015-03, Vol.106 (12)
Hauptverfasser: Kumar, Jatinder, Kuroda, Marcelo A., Bellus, Matthew Z., Han, Shu-Jen, Chiu, Hsin-Ying
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Charge transport
Crystals
Density
Semiconductor devices
Silicon dioxide
Silicon substrates
Single crystals
Transistors
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Zusammenfassung:We fabricated transistors formed by few layers to bulk single crystal WS2 to quantify the factors governing charge transport. We established a capacitor network to analyze the full-range electrical characteristics of the channel, highlighting the role of quantum capacitance and interface trap density. We find that the transfer characteristics are mainly determined by the interplay between quantum and oxide capacitances. In the OFF-state, the interface trap density (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4916403