Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal
The lattice dynamical properties of the corundum-like α-phase of Ga2O3 are investigated by means of Raman scattering experiments and ab-initio calculations. A high-quality, single-crystal thick epilayer was grown on sapphire by the mist-chemical vapor deposition method. The phonon frequencies at the...
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Veröffentlicht in: | Journal of applied physics 2015-05, Vol.117 (18) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The lattice dynamical properties of the corundum-like α-phase of Ga2O3 are investigated by means of Raman scattering experiments and ab-initio calculations. A high-quality, single-crystal thick epilayer was grown on sapphire by the mist-chemical vapor deposition method. The phonon frequencies at the Brillouin zone center of all the Raman-active modes are determined by polarized Raman scattering measurements on an α-Ga2O3 single crystal. By performing backscattering measurements from (0001) and (101¯0) faces, all Raman active modes are unambiguously identified. Density functional perturbation theory calculations were carried out to determine the symmetry and the frequency of the α-Ga2O3 lattice modes. We find a good agreement between the theoretical predictions and the Raman spectra. The relative intensity of the different modes and their polarizability are discussed. The Raman spectrum is dominated by a narrow A1g peak which indicates the high crystalline quality of the layers grown by the mist chemical vapor deposition method. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4921060 |