Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal

The lattice dynamical properties of the corundum-like α-phase of Ga2O3 are investigated by means of Raman scattering experiments and ab-initio calculations. A high-quality, single-crystal thick epilayer was grown on sapphire by the mist-chemical vapor deposition method. The phonon frequencies at the...

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Veröffentlicht in:Journal of applied physics 2015-05, Vol.117 (18)
Hauptverfasser: Cuscó, R., Domènech-Amador, N., Hatakeyama, T., Yamaguchi, T., Honda, T., Artús, L.
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Sprache:eng
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Zusammenfassung:The lattice dynamical properties of the corundum-like α-phase of Ga2O3 are investigated by means of Raman scattering experiments and ab-initio calculations. A high-quality, single-crystal thick epilayer was grown on sapphire by the mist-chemical vapor deposition method. The phonon frequencies at the Brillouin zone center of all the Raman-active modes are determined by polarized Raman scattering measurements on an α-Ga2O3 single crystal. By performing backscattering measurements from (0001) and (101¯0) faces, all Raman active modes are unambiguously identified. Density functional perturbation theory calculations were carried out to determine the symmetry and the frequency of the α-Ga2O3 lattice modes. We find a good agreement between the theoretical predictions and the Raman spectra. The relative intensity of the different modes and their polarizability are discussed. The Raman spectrum is dominated by a narrow A1g peak which indicates the high crystalline quality of the layers grown by the mist chemical vapor deposition method.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4921060