Verification of electron doping in single-layer graphene due to H2 exposure with thermoelectric power

We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectri...

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Veröffentlicht in:Applied physics letters 2015-04, Vol.106 (14)
Hauptverfasser: Hong, Sung Ju, Park, Min, Kang, Hojin, Lee, Minwoo, Soler-Delgado, David, Shin, Dong Seok, Kim, Kyung Ho, Kubatkin, Sergey, Jeong, Dae Hong, Park, Yung Woo, Kim, Byung Hoon
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Sprache:eng
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Zusammenfassung:We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H2 molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4917470