Two-dimensional topological semimetal state in a nanopatterned semiconductor system

We propose the creation of a two-dimensional topological semimetal in a semiconductor artificial lattice with triangular symmetry. An in-plane magnetic field drives a quantum phase transition between the topological insulating and topological semimetal phases. The topological semimetal is characteri...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review. B 2017-08, Vol.96 (8), Article 085301
Hauptverfasser: Li, Tommy, Sushkov, Oleg P.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We propose the creation of a two-dimensional topological semimetal in a semiconductor artificial lattice with triangular symmetry. An in-plane magnetic field drives a quantum phase transition between the topological insulating and topological semimetal phases. The topological semimetal is characterized by robust band-touching points which carry quantized Berry flux and edge states which terminate at the band-touching points. The topological phase transition is predicted to occur at magnetic fields ∼4T in high mobility GaAs artificial lattices, and can be detected via the anomalous behavior of the edge conductance.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.96.085301