Two-dimensional topological semimetal state in a nanopatterned semiconductor system
We propose the creation of a two-dimensional topological semimetal in a semiconductor artificial lattice with triangular symmetry. An in-plane magnetic field drives a quantum phase transition between the topological insulating and topological semimetal phases. The topological semimetal is characteri...
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Veröffentlicht in: | Physical review. B 2017-08, Vol.96 (8), Article 085301 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | We propose the creation of a two-dimensional topological semimetal in a semiconductor artificial lattice with triangular symmetry. An in-plane magnetic field drives a quantum phase transition between the topological insulating and topological semimetal phases. The topological semimetal is characterized by robust band-touching points which carry quantized Berry flux and edge states which terminate at the band-touching points. The topological phase transition is predicted to occur at magnetic fields ∼4T in high mobility GaAs artificial lattices, and can be detected via the anomalous behavior of the edge conductance. |
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ISSN: | 2469-9950 2469-9969 |
DOI: | 10.1103/PhysRevB.96.085301 |